Application of microelectronic technology
In the 1930s, quantum mechanics made remarkable achievements. It was applied to solid-state physics and produced solid-state energy band theory, which laid an important foundation for the development of semiconductor technology. In 1947, three scientists at at & T's Bell Labs, Badin, Brighton and Shockley, invented the transistor. This - invention is a major breakthrough in electronic technology in the 20th century, opening the sequence for the introduction of microelectronic technology.
Transistors replace tubes, but one device replaces another. The Ministry i] also hopes that electronic equipment will be further miniaturized, which strongly promotes people to open up new ways of electronic technology.
In May 1952, British Dammer first put forward the idea of integrated circuit at the - electronic components conference: the electronic equipment is made on a solid block without wires. This solid block is composed of some insulating, conductive, rectifying and amplifying material layers, and the cut areas of each layer are directly connected to achieve a certain function. In 1957, the British price company cooperated with the marville Radar Research Institute in 6.3 mmx6 3 mmx3. The trigger circuit is made on 15 mm silicon crystal. In 1958, Kirby of Texas company and Noyce of Fairchild company in 6 A RC phase-shifting oscillator composed of 12 elements including resistance and capacitance is made on a 45 m silicon wafer. In 1959, Noyce and Moore of Fairchild company developed a process especially suitable for making integrated circuits. They skillfully used the shielding effect of silicon dioxide on the diffusion of some impurities to diffuse certain materials in the etched window of silicon dioxide layer on silicon wafer to form various components. At the same time, they also applied the isolation technology of PN junction and deposited metal on silicon dioxide as wires, In this way, the whole process of integrated circuit is basically completed.
The invention of integrated circuit has led to a new revolution in electronic technology, marking the stage of microelectronic technology.
Integrated circuit is a miniaturized circuit or system based on semiconductor crystal material and using special technology to integrate the components and interconnects of the circuit into the interior, surface or substrate. One of the indicators of IC level is the degree of integration. The so-called integration refers to how many transistors can be made on a chip of one size- Generally, the integrated circuit with less than 100 transistors is called small scale integration (SSI), and the integrated circuit with 100 ~ 1000 transistors is called medium. How many scale integration can be done on a fixed-size chip, referred to as MSD, Integrated circuits with 1000 ~ 100000 transistors become large scale integration (LSI), and integrated circuits with 100000 ~ 10 million transistors become very large scale integration (VLSD).
In the early stage of the development of integrated circuit, only a few and dozens of transistors can be manufactured on one chip, so the function of the circuit is limited. By the mid-1960s, the degree of integration had increased to hundreds or even thousands of components. The 1970s was a period of rapid development of integrated circuits and entered the era of large-scale integrated circuits. During this period, chips integrating more than 200000 components have appeared. Large scale integrated circuit is not only the increase of the number of components, but also the fundamental change of the integrated object. It can be a complex functional component or a complete machine (single chip computer). The 1980s can be regarded as the era of VLSI, chip The integration quantity of Shangyuan devices has broken through the million mark. So many components are integrated on a small silicon wafer, and the area occupied by the components and the wiring between the components are as thin as 0.5% twenty-five μ m(1 μ m=10 - 6m)。 At present, the world's integrated circuits are moving towards 0.18 μ m、0 .13 μ Um process transition.
